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IGBT单管
Part Number Download Status Product Grade Diode Type

VCES

(V)

Ic@Tc=100℃

(A)

Ic@Tc=25℃

(A)

Vcesat

(V)

Switching Frequency

(KHZ)

Eon

(mJ)

Eoff

(mJ)

Short Current Withstand Time

(us)

Type Package
Active
Ready
automotive
industrial
SiC
silicon
0~8
20~45
8~20
FST2.0
FST3.0
TO-220FA
TO-247
TO-247plus
TO-252
TO-263
TO-263FC
TO-3P
CGWT80N65F2SAD

Active
industrial
silicon
650
80
100
1.55
8~20
1.97
1.19
3
FST2.0
TO-247